Monte Carlo N-particle simulation of neutron-based sterilisation of anthrax contamination
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Design and Simulation of Photoneutron Source by MCNPX Monte Carlo Code for Boron Neutron Capture Therapy
Introduction Electron linear accelerator (LINAC) can be used for neutron production in Boron Neutron Capture Therapy (BNCT). BNCT is an external radiotherapeutic method for the treatment of some cancers. In this study, Varian 2300 C/D LINAC was simulated as an electron accelerator-based photoneutron source to provide a suitable neutron flux for BNCT. Materials and Methods Photoneutron sources w...
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The most important part of neutron therapy treatment (NCT1) is to achieve a beam of neutrons with suitable energy and intensity, as well as the least pollution and damage. In this study, in order to correct the neutron spectrum from D-D fusion and its use in neutron therapy, a set of different materials which are called the Beam Shaping Assembly (BSA) was placed in the direction of energy 2.45 ...
متن کاملThe influence of neutron contamination on pacemaker in photon beam radiotherapy by LINAC using the Monte Carlo method
In radiation therapy with high-energy photon beams (E > 10 MV) neutrons are generated mainly in LINACs head thorough (γ,n) interactions. These neutrons affect the shielding requirements in radiation therapy rooms. According to the AAPMTG-34 report, photon absorbed dose of 10Gy can cause permanent damage to the pacemaker and the dose of 2Gy can make minor changes in the functioning of the pac...
متن کاملThe influence of neutron contamination on pacemaker in photon beam radiotherapy by LINAC using the Monte Carlo method
Introduction: In radiation therapy with high-energy photon beams (E > 7 MeV) neutrons are generated mainly in LINACs head thorough (γ, n) interactions. These neutrons affect the shielding requirements in radiation therapy rooms. According to the protocol TG-34, photon absorbed dose of 10Gy can cause permanent damage to the pacemaker and the dose of 2Gy can make minor changes in...
متن کاملParticle Monte Carlo simulation of quantum phenomena in semiconductor nanostructures
Quantum effects in semiconductor devices are usually described in terms of wave functions obtained from the solution of the Schrödinger equation. However, it is difficult to simulate practical devices where clear semiclassical and quantum features coexist, as is the case for nanoscale devices at normal temperatures. We present here a particle description of quantum phenomena derived starting fr...
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ژورنال
عنوان ژورنال: The British Journal of Radiology
سال: 2012
ISSN: 0007-1285,1748-880X
DOI: 10.1259/bjr/68583711